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IRF630 Power...

Rs.62.00 Rs.35.00

  •  Extremely high dv/dt capability
  •  Very low intrinsic capacitances
  •  Gate charge minimized
  • VDS Drain-source voltage (VGS = 0) 200 V
  • VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V

*Price is given for 1 pc only

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SKU: irf630-power-mosfet Category:

Description

IRF630 MOSFET

IRF630 is a third generation N Channel Power MOSFETs that provides designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features of IRF630N MOSFET

  •  Extremely high dv/dt capability
  •  Very low intrinsic capacitances
  •  Gate charge minimized
  • VDS Drain-source voltage (VGS = 0) 200 V
  • VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V
  • VGS Gate-source voltage ± 20 V
  • ID Drain current (continuous) at T= 25°C 9A
  • ID Drain current (continuous) at TC=100°C 5.7A
  • PTOT Total dissipation at TC = 25°C 75W

Additional information

Weight 0.25 kg

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